Enhanced resistance of single-layer graphene to ion bombardment
نویسندگان
چکیده
منابع مشابه
Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts
Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He⁺) bombardment and annealing on the contact resistance between graphene and various metals (Ag, Pd, and Pt) were systematically explored. It is found that the contact resistances between all metals ...
متن کاملGraphene-enhanced Raman spectroscopy of thymine adsorbed on single-layer graphene
Graphene-enhanced Raman scattering (GERS) spectra and coherent anti-Stokes Raman scattering (CARS) of thymine molecules adsorbed on a single-layer graphene were studied. The enhancement factor was shown to depend on the molecular groups of thymine. In the GERS spectra of thymine, the main bands are shifted with respect to those for molecules adsorbed on a glass surface, indicating charge transf...
متن کاملDurable Corrosion Resistance of Copper Due to Multi-Layer Graphene
Ultra-thin graphene coating has been reported to provide considerable resistance against corrosion during short-term exposures, however, there is great variability in the corrosion resistance due to graphene coating in different studies. It may be possible to overcome the problem of hampered corrosion protection ability of graphene that is caused due to defective single layer graphene by applyi...
متن کاملSuperior thermal conductivity of single-layer graphene.
We report the measurement of the thermal conductivity of a suspended single-layer graphene. The room temperature values of the thermal conductivity in the range approximately (4.84+/-0.44)x10(3) to (5.30+/-0.48)x10(3) W/mK were extracted for a single-layer graphene from the dependence of the Raman G peak frequency on the excitation laser power and independently measured G peak temperature coeff...
متن کاملNanoscale chemical imaging of single-layer graphene.
Electronic properties in different graphene materials are influenced by the presence of defects and their relative position with respect to the edges. Their localization is crucial for the reliable development of graphene-based electronic devices. Graphene samples produced by standard CVD on copper and by the scotch-tape method on gold were investigated using tip-enhanced Raman spectroscopy (TE...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3428466